A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface
Identifieur interne : 001027 ( Russie/Analysis ); précédent : 001026; suivant : 001028A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface
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Abstract
The excitonic characteristics of InxGaAs1-x-GaAs heterostructures in quantum wells in the presence of a corrugated surface has been investigated. The corrugated surface gives a substantial (up to 20%) polarization of the excitonic spectra even when the exciting light is incident in the direction of the normal. The exciton binding energies are calculated on the basis of data on the phonon repetitions of the photoluminescence spectra and the results agree well with the theoretical calculations. The parameters of the surface microrelief of the experimental layered structures are estimated on the basis of the degree of polarization of the photoluminescence and the magnitudes of the reflection and transmission. © 1997 American Institute of Physics.
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Litovchenko</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics, Ukrainian National Academy of Sciences, 252650 Kiev, Ukraine</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Institute of Semiconductor Physics, Ukrainian National Academy of Sciences, 252650 Kiev</wicri:regionArea><wicri:noRegion>252650 Kiev</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0572452</idno><date when="1997-07">1997-07</date><idno type="stanalyst">PASCAL 97-0572452 AIP</idno><idno type="RBID">Pascal:97-0572452</idno><idno type="wicri:Area/Main/Corpus">018231</idno><idno type="wicri:Area/Main/Repository">017C65</idno><idno type="wicri:Area/Russie/Extraction">001027</idno></publicationStmt><seriesStmt><idno type="ISSN">1063-7826</idno><title level="j" type="abbreviated">Semiconductors</title><title level="j" type="main">Semiconductors</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Excitons</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor heterojunctions</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320D</term><term>7135C</term><term>7340K</term><term>7866F</term><term>7855C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Hétérojonction semiconducteur</term><term>Exciton</term><term>Puits quantique semiconducteur</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The excitonic characteristics of In<sub>x</sub>GaAs<sub>1-x</sub>-GaAs heterostructures in quantum wells in the presence of a corrugated surface has been investigated. The corrugated surface gives a substantial (up to 20%) polarization of the excitonic spectra even when the exciting light is incident in the direction of the normal. The exciton binding energies are calculated on the basis of data on the phonon repetitions of the photoluminescence spectra and the results agree well with the theoretical calculations. 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